NTMTS0D7N06CL Series

Single N-Channel Power MOSFET 40V, 553.8A, 0.4mΩ, PQFN 8x8

Catalog

Single N-Channel Power MOSFET 40V, 553.8A, 0.4mΩ, PQFN 8x8

Part	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTMTS0D4N04CLTXG	2.5 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	20 V	8.3	8-DFNW	8.4	40 V	20600 pF	341 nC	5 W 244 W	N-Channel	79.8 A 553.8 A	Surface Mount	8-PowerTDFN	0.4 mOhm	4.5 V 10 V
ON Semiconductor NTMTS0D7N06CLTXG	2.5 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	20 V	8.3	8-DFNW	8.4	60 V	16200 pF			N-Channel	62.2 A	Surface Mount	8-PowerTDFN		4.5 V 10 V	0.68 mOhm	5 W	294.6 W	225 nC	477 A

Catalog

Single N-Channel Power MOSFET 40V, 553.8A, 0.4mΩ, PQFN 8x8

Key Features

• Very Low RDS(on), Shielded Gate Trench Technology

• Low Profile PQFN 8x8 package

• Maximum junction temperature of 175C

• RoHS Compliant

Description

This N-Channel T6 60V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.