Specification	NVMTS0D6N04CTXG

Current - Continuous Drain (Id) @ 25°C	533 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	187 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	11800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	0.48 mOhm
Supplier Device Package	8-DFNW
Supplier Device Package [x]	8.3
Supplier Device Package [y]	8.4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NVMTS0D6N04C Series

Power MOSFET, Single N-Channel, 40 V, 0.67 mOhms, 420 A

Part	Drain to Source Voltage (Vdss)	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Grade	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor NVMTS0D6N04CTXG	40 V	8.3	8-DFNW	8.4	10 V	MOSFET (Metal Oxide)	0.48 mOhm	4 V	Automotive	187 nC	5 W	Surface Mount	533 A	N-Channel	20 V	11800 pF	8-PowerTDFN	-55 °C	175 ░C	AEC-Q101
ON Semiconductor NVMTS0D7N04CTXG	40 V	8.3	8-DFNW	8.4	10 V	MOSFET (Metal Oxide)	0.67 mOhm	4 V	Automotive		3.9 W 273 W	Surface Mount	51 A 430 A	N-Channel	20 V	9281 pF	8-PowerTDFN	-55 °C	175 ░C	AEC-Q101	140 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 9.20
		10	$ 6.31
		100	$ 4.67
		500	$ 4.25
	Digi-Reel®	1	$ 9.20
		10	$ 6.31
		100	$ 4.67
		500	$ 4.25
	Tape & Reel (TR)	3000	$ 4.25
Newark	Each (Supplied on Full Reel)	3000	$ 5.11
		6000	$ 4.77
		12000	$ 4.43
		18000	$ 4.26
		30000	$ 4.19
ON Semiconductor	N/A	1	$ 3.91

Description

General part information

NVMTS0D6N04C Series

Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank capable for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Documents

Technical documentation and resources

Datasheet

Package Drawing-507AP-TDFNW8 8.30x8.40x1.10, 2.00P

Package Drawing

Product Change Notice EN

Datasheet