NVMTS0D6N04C Series

Power MOSFET, Single N-Channel, 40 V, 0.67 mOhms, 420 A

Catalog

Power MOSFET, Single N-Channel, 40 V, 0.67 mOhms, 420 A

Part	Drain to Source Voltage (Vdss)	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Grade	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor NVMTS0D6N04CTXG	40 V	8.3	8-DFNW	8.4	10 V	MOSFET (Metal Oxide)	0.48 mOhm	4 V	Automotive	187 nC	5 W	Surface Mount	533 A	N-Channel	20 V	11800 pF	8-PowerTDFN	-55 °C	175 ░C	AEC-Q101
ON Semiconductor NVMTS0D7N04CTXG	40 V	8.3	8-DFNW	8.4	10 V	MOSFET (Metal Oxide)	0.67 mOhm	4 V	Automotive		3.9 W 273 W	Surface Mount	51 A 430 A	N-Channel	20 V	9281 pF	8-PowerTDFN	-55 °C	175 ░C	AEC-Q101	140 nC

Catalog

Power MOSFET, Single N-Channel, 40 V, 0.67 mOhms, 420 A

Key Features

• Small Footprint (8x8 mm)

• Low RDS(on)

• Low QGand Capacitance

• Wettable Flank Option

• AEC−Q101 Qualified and PPAP Capable

• RoHS Compliant

Description

Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank capable for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.