Discrete Semiconductor Products
FDMA530PZ
ActiveON Semiconductor
POWER MOSFET, P CHANNEL, 30 V, 6.8 A, 0.03 OHM, MICROFET, SURFACE MOUNT
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Discrete Semiconductor Products
FDMA530PZ
ActiveON Semiconductor
POWER MOSFET, P CHANNEL, 30 V, 6.8 A, 0.03 OHM, MICROFET, SURFACE MOUNT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMA530PZ |
|---|---|
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 24 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1070 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Power Dissipation (Max) | 2.4 W |
| Rds On (Max) @ Id, Vgs | 35 mOhm |
| Supplier Device Package | 6-MicroFET (2x2) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 804 | $ 0.37 | |
| Newark | Each (Supplied on Full Reel) | 3000 | $ 0.38 | |
| 6000 | $ 0.37 | |||
| 12000 | $ 0.35 | |||
| 18000 | $ 0.35 | |||
| ON Semiconductor | N/A | 1 | $ 0.30 | |
Description
General part information
FDMA530PZ Series
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications . It features a MOSFET with low on-state resistance.The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Documents
Technical documentation and resources