Specification	NVJD5121NT2G

Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	295 mA
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs [Max]	0.9 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	26 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	250 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.6 Ohm
Supplier Device Package	SC70-6, SC-88, SOT-363
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

NVJD5121N Series

Dual N−Channel Power MOSFET with ESD Protection 60V, 295mA, 1.6Ω

Part	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Supplier Device Package
ON Semiconductor NVJD5121NT2G	1.6 Ohm	250 mW	295 mA	2.5 V	6-TSSOP SC-88 SOT-363	26 pF	AEC-Q101	60 V	0.9 nC	Automotive	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	2 N-Channel	SC-88 SC70-6 SOT-363

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.39
		10	$ 0.24
		100	$ 0.15
		500	$ 0.11
		1000	$ 0.10
	Digi-Reel®	1	$ 0.39
		10	$ 0.24
		100	$ 0.15
		500	$ 0.11
		1000	$ 0.10
	Tape & Reel (TR)	3000	$ 0.08
		6000	$ 0.08
		9000	$ 0.07
		15000	$ 0.07
		21000	$ 0.07
		30000	$ 0.06
		75000	$ 0.06
		150000	$ 0.06
Newark	Each (Supplied on Full Reel)	1000	$ 0.11
		5000	$ 0.10
ON Semiconductor	N/A	1	$ 0.08

Description

General part information

NVJD5121N Series

Automotive Power MOSFET ideal for low power applications. 60V 295mA 1.6 Ω Dual N-Channel SC−88 with ESD Protection, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.