Specification	NTTYS009N08HLTWG

Current - Continuous Drain (Id) @ 25°C	58 A, 12 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	1402 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power Dissipation (Max)	73 W, 3.2 W
Rds On (Max) @ Id, Vgs	8.6 mOhm
Supplier Device Package	8-LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NTTYS009N08HL Series

MOSFET - Power, Single, N-Channel, 80 V, 9 mΩ, 58 A

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs (Max)	FET Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NTTYS009N08HLTWG	24 nC	12 A 58 A	8.6 mOhm	80 V	2 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	20 V	N-Channel	3.2 W 73 W	4.5 V 10 V	8-LFPAK56 SOT-1205	8-LFPAK	Surface Mount	1402 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Commercial Power MOSFET in a 3x3mm flat lead package as LFPAK33 designed for compact and efficient designs and including high thermal performance.