NTTYS009N08HL Series

MOSFET - Power, Single, N-Channel, 80 V, 9 mΩ, 58 A

Catalog

MOSFET - Power, Single, N-Channel, 80 V, 9 mΩ, 58 A

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs (Max)	FET Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NTTYS009N08HLTWG	24 nC	12 A 58 A	8.6 mOhm	80 V	2 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	20 V	N-Channel	3.2 W 73 W	4.5 V 10 V	8-LFPAK56 SOT-1205	8-LFPAK	Surface Mount	1402 pF

MOSFET - Power, Single, N-Channel, 80 V, 9 mΩ, 58 A

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Small Footprint (3.3 x 3.3mm)

• These Devices are Pb−Free and are RoHS Compliant

• Logic Level 5V drive capable

Commercial Power MOSFET in a 3x3mm flat lead package as LFPAK33 designed for compact and efficient designs and including high thermal performance.