Discrete Semiconductor Products

IRFS11N50ATRLP

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MOSFET N-CH 500V 11A TO263AB

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Discrete Semiconductor Products

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MOSFET N-CH 500V 11A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS11N50ATRLP

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC
Input Capacitance (Ciss) (Max) @ Vds	1423 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	170 W
Rds On (Max) @ Id, Vgs	520 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
Vishay General Semiconductor - Diodes Division IRFS11N50ATRLP	170 W	MOSFET (Metal Oxide)	500 V	11 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	30 V	-55 °C	150 °C	4 V	Surface Mount	52 nC	10 V	N-Channel	520 mOhm	1423 pF
Vishay General Semiconductor - Diodes Division IRFS11N50APBF	170 W	MOSFET (Metal Oxide)	500 V	11 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	30 V	-55 °C	150 °C	4 V	Surface Mount	52 nC	10 V	N-Channel	520 mOhm	1423 pF	TO-263 (D2PAK)
Vishay General Semiconductor - Diodes Division IRFS11N50ATRL	170 W	MOSFET (Metal Oxide)	500 V	11 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	30 V	-55 °C	150 °C	4 V	Surface Mount	52 nC	10 V	N-Channel	520 mOhm	1423 pF	TO-263 (D2PAK)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 11A (Tc) 170W (Tc) Surface Mount TO-263AB

Technical documentation and resources