IRFS11 Series

Catalog

MOSFET N-CH 500V 11A TO263AB

Part	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
Vishay General Semiconductor - Diodes Division IRFS11N50ATRLP	170 W	MOSFET (Metal Oxide)	500 V	11 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	30 V	-55 °C	150 °C	4 V	Surface Mount	52 nC	10 V	N-Channel	520 mOhm	1423 pF
Vishay General Semiconductor - Diodes Division IRFS11N50APBF	170 W	MOSFET (Metal Oxide)	500 V	11 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	30 V	-55 °C	150 °C	4 V	Surface Mount	52 nC	10 V	N-Channel	520 mOhm	1423 pF	TO-263 (D2PAK)
Vishay General Semiconductor - Diodes Division IRFS11N50ATRL	170 W	MOSFET (Metal Oxide)	500 V	11 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	30 V	-55 °C	150 °C	4 V	Surface Mount	52 nC	10 V	N-Channel	520 mOhm	1423 pF	TO-263 (D2PAK)