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IFEINFAIGW50N65F5XKSA1
Discrete Semiconductor Products

FCH041N65F-F085

Active
ON Semiconductor

650V, 76A, 34M , TO-247<BR>N-CHANNEL SUPERFET II / TUBE ROHS COMPLIANT: YES

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IFEINFAIGW50N65F5XKSA1
Discrete Semiconductor Products

FCH041N65F-F085

Active
ON Semiconductor

650V, 76A, 34M , TO-247<BR>N-CHANNEL SUPERFET II / TUBE ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFCH041N65F-F085
Current - Continuous Drain (Id) @ 25°C76 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]304 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds13566 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)595 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs41 mOhm
Supplier Device PackageTO-247
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 32$ 9.54
NewarkEach 250$ 9.24
500$ 8.98
ON SemiconductorN/A 1$ 11.73

Description

General part information

FCH041N65F_F085 Series

SuperFET® II MOSFET is a brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistanceand lower gate charge performance. This technology is tailoredto minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive.SuperFET II FRFET® MOSFET’s optimized body diode reverserecovery performance can remove additional component andimprove system reliability