FCH041N65F_F085 Series

N-Channel SuperFET II™ FRFET MOSFET 650V, 76A, 34mΩ

Catalog

N-Channel SuperFET II™ FRFET MOSFET 650V, 76A, 34mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Mounting Type	Grade	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
ON Semiconductor FCH041N65F-F085	76 A	TO-247	20 V	5 V	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	10 V	304 nC	13566 pF	AEC-Q101	Through Hole	Automotive	TO-247-3	595 W	650 V	41 mOhm

Catalog

N-Channel SuperFET II™ FRFET MOSFET 650V, 76A, 34mΩ

Key Features

• Typical RDS(on)= 34 mΩ at VGS= 10 V, ID= 38 A

• Typical Qg(tot)= 234 nC at VGS= 10V, ID= 38 A

• UIS Capability

• Qualified to AEC Q101

• RoHS Compliant

Description

SuperFET® II MOSFET is a brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistanceand lower gate charge performance. This technology is tailoredto minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive.SuperFET II FRFET® MOSFET’s optimized body diode reverserecovery performance can remove additional component andimprove system reliability