Discrete Semiconductor Products

SIR788DP-T1-GE3

Obsolete

MOSFET N-CH 30V 60A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 60A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR788DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Input Capacitance (Ciss) (Max) @ Vds	2873 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	5 W, 48 W
Rds On (Max) @ Id, Vgs	3.4 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Power Dissipation (Max)	FET Feature	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type
Vishay General Semiconductor - Diodes Division SIR788DP-T1-GE3	5 W 48 W	Schottky Diode (Body)	-55 °C	150 °C	2873 pF	2.5 V	30 V	MOSFET (Metal Oxide)	3.4 mOhm	PowerPAK® SO-8	20 V	75 nC	4.5 V 10 V	PowerPAK® SO-8	60 A	Surface Mount	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 60A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources