SIR788 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 30V 60A PPAK SO-8
| Part | Power Dissipation (Max) | FET Feature | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Technology | Rds On (Max) @ Id, Vgs | Package / Case | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Mounting Type | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 5 W 48 W | Schottky Diode (Body) | -55 °C | 150 °C | 2873 pF | 2.5 V | 30 V | MOSFET (Metal Oxide) | 3.4 mOhm | PowerPAK® SO-8 | 20 V | 75 nC | 4.5 V 10 V | PowerPAK® SO-8 | 60 A | Surface Mount | N-Channel |