Specification	CSD17301Q5A

Current - Continuous Drain (Id) @ 25°C	28 A, 100 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	3 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds	3480 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3.2 W
Rds On (Max) @ Id, Vgs	2.6 mOhm
Supplier Device Package	8-VSONP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1.55 V

CSD17301Q5A Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3 mOhm

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case
Texas Instruments CSD17301Q5A	1.55 V	25 nC	28 A 100 A	8-VSONP (5x6)	MOSFET (Metal Oxide)	-55 °C	150 °C	2.6 mOhm	10 V	-8 V	8 V	3 V	N-Channel	3480 pF	3.2 W	30 V	Surface Mount	8-PowerTDFN

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.

Technical documentation and resources