CSD17301Q5A Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3 mOhm

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case
Texas Instruments CSD17301Q5A	1.55 V	25 nC	28 A 100 A	8-VSONP (5x6)	MOSFET (Metal Oxide)	-55 °C	150 °C	2.6 mOhm	10 V	-8 V	8 V	3 V	N-Channel	3480 pF	3.2 W	30 V	Surface Mount	8-PowerTDFN

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3 mOhm

Key Features

• Optimized for 5V Gate DriveUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSNotebook Point of LoadPoint-of-Load Synchronous Buck in Networking,Telecom and Computing SystemsOptimized for Synchronous FET ApplicationsNexFET is a trademark of Texas Instruments.Optimized for 5V Gate DriveUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSNotebook Point of LoadPoint-of-Load Synchronous Buck in Networking,Telecom and Computing SystemsOptimized for Synchronous FET ApplicationsNexFET is a trademark of Texas Instruments.

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.