Zenode.ai Logo
Beta
Littelfuse-IXFH14N80P MOSFETs Trans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-247AD
Discrete Semiconductor Products

IXFH15N100P

Active
Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 1KV 15A 3-PIN(3+TAB) TO-247

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
Littelfuse-IXFH14N80P MOSFETs Trans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-247AD
Discrete Semiconductor Products

IXFH15N100P

Active
Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 1KV 15A 3-PIN(3+TAB) TO-247

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIXFH15N100P
Current - Continuous Drain (Id) @ 25°C15 A
Drain to Source Voltage (Vdss)1000 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs97 nC
Input Capacitance (Ciss) (Max) @ Vds5140 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)543 W
Rds On (Max) @ Id, Vgs760 mOhm
Supplier Device PackageTO-247AD (IXFH)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id6.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 11.92
30$ 9.51
120$ 8.51
510$ 7.51
1020$ 6.76
NewarkEach 250$ 7.00
500$ 6.50

Description

General part information

IXFH15N100Q3 Series

The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device. Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings

Documents

Technical documentation and resources