Discrete Semiconductor Products

IXFH15N100Q3

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Littelfuse/Commercial Vehicle Products

DISCMSFT NCHHIPERFET-Q3 CLASS TO-247AD

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Discrete Semiconductor Products

IXFH15N100Q3

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCHHIPERFET-Q3 CLASS TO-247AD

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH15N100Q3

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Input Capacitance (Ciss) (Max) @ Vds	3250 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	690 W
Rds On (Max) @ Id, Vgs	1.05 Ohm
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

IXFH15N100Q3 Series

DiscMSFT NChHiPerFET-Q3 Class TO-247AD

Part	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
Littelfuse/Commercial Vehicle Products IXFH15N100Q3	N-Channel	30 V	3250 pF	MOSFET (Metal Oxide)	1000 V	64 nC	1.05 Ohm	-55 °C	150 °C	690 W	10 V	6.5 V	TO-247-3	TO-247AD (IXFH)	Through Hole	15 A
Littelfuse/Commercial Vehicle Products IXFH15N100P	N-Channel	30 V	5140 pF	MOSFET (Metal Oxide)	1000 V		760 mOhm	-55 °C	150 °C	543 W	10 V	6.5 V	TO-247-3	TO-247AD (IXFH)	Through Hole	15 A	97 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 16.93
		30	$ 13.70
		120	$ 12.90
		510	$ 11.69

Description

General part information

IXFH15N100Q3 Series

The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device. Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings

Documents

Technical documentation and resources