Discrete Semiconductor Products

6A10-G

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DIODE GEN PURP 1KV 6A R-6

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Discrete Semiconductor Products

Active

DIODE GEN PURP 1KV 6A R-6

Technical Specifications

Parameters and characteristics for this part

Specification	6A10-G

Capacitance	100 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	125 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	R-6, Axial
Package Name	R-6
Speed	Standard Recovery
Speed - Fast Recovery (Minimum)	200 mA, 500 ns
Speed - Recovery Current	200 mA, 200 mA
Speed - Recovery Time	500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	1 kV
Voltage - Forward (Vf) (Max)	1 V

Part	Mounting Type	Technology	Package / Case	Current - Reverse Leakage	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time	Voltage - DC Reverse (Vr) (Max)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Current - Average Rectified (Io)	Package Name	Voltage - Forward (Vf) (Max)	Capacitance
Comchip Technology 6A10B-G	Through Hole	Standard	Axial R-6	10 µA	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1 kV	125 °C	-55 °C	6 A	R-6	1 V	100 pF
Comchip Technology 6A10-G	Through Hole	Standard	Axial R-6	10 µA	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1 kV	125 °C	-55 °C	6 A	R-6	1 V	100 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Diode 1000 V 6A Through Hole R-6

Technical documentation and resources

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