Discrete Semiconductor Products

6A10B-G

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Comchip Technology

DIODE GEN PURP 1KV 6A R-6

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Discrete Semiconductor Products

Active

Comchip Technology

DIODE GEN PURP 1KV 6A R-6

Technical Specifications

Parameters and characteristics for this part

Specification	6A10B-G

Capacitance @ Vr, F	100 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	10 çA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	R-6, Axial
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	R-6
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Current - Reverse Leakage @ Vr	Speed	Speed	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Technology
Comchip Technology 6A10B-G	6 A	1000 V	100 pF	R-6	R-6 Axial	1 V	Through Hole	10 çA	Standard Recovery >500ns	200 mA	-55 °C	125 °C	Standard
Comchip Technology 6A10-G	6 A	1000 V	100 pF	R-6	R-6 Axial	1 V	Through Hole	10 çA	Standard Recovery >500ns	200 mA	-55 °C	125 °C	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1000	$ 0.22

General part information

Diode 1000 V 6A Through Hole R-6

Technical documentation and resources

No documents available