FDS9435A-NBAD008

NRND

ON Semiconductor

30V P-CHANNEL POWERTRENCH® MOSFET -5.3A, 50MΩ

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DocumentsDatasheet Package Drawing-751EB-SOIC8

Discrete Semiconductor Products

FDS9435A-NBAD008

NRND

ON Semiconductor

30V P-CHANNEL POWERTRENCH® MOSFET -5.3A, 50MΩ

Deep-Dive with AI

DocumentsDatasheet Package Drawing-751EB-SOIC8

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDS9435A-NBAD008

Current - Continuous Drain (Id) @ 25°C	5.3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	528 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	3 V

FDS9435A Series

30V P-Channel PowerTrench® MOSFET -5.3A, 50mΩ

Part	Technology	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]
ON Semiconductor FDS9435A-NBAD008	MOSFET (Metal Oxide)	50 mOhm	P-Channel	-55 °C	175 ░C	25 V	5.3 A	14 nC	528 pF	8-SOIC	4.5 V 10 V	30 V	1 W	3 V	Surface Mount	8-SOIC	3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	1000	$ 0.91

Description

General part information

FDS9435A Series

This P-Channel MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).