FDS9435A Series

30V P-Channel PowerTrench® MOSFET -5.3A, 50mΩ

Catalog

30V P-Channel PowerTrench® MOSFET -5.3A, 50mΩ

Part	Technology	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]
ON Semiconductor FDS9435A-NBAD008	MOSFET (Metal Oxide)	50 mOhm	P-Channel	-55 °C	175 ░C	25 V	5.3 A	14 nC	528 pF	8-SOIC	4.5 V 10 V	30 V	1 W	3 V	Surface Mount	8-SOIC	3.9 mm	0.154 in

Catalog

30V P-Channel PowerTrench® MOSFET -5.3A, 50mΩ

Key Features

-5.3 A, -30 V

• RDS(ON)= 50 mΩ @ VGS= -10 V

• RDS(ON)= 80 mΩ @ VGS= - 4.5 V.

• Low gate charge

• Fast switching speed

• High density cell design for extremely low RDS(ON).

• High power and current handling capability

Description

This P-Channel MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).