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IXTT10N100D
Discrete Semiconductor Products

IXTT10N100D

Active
Littelfuse/Commercial Vehicle Products

DISC MOSFET N-CH DEPL MODE-STD TO-268AA/ TUBE

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IXTT10N100D
Discrete Semiconductor Products

IXTT10N100D

Active
Littelfuse/Commercial Vehicle Products

DISC MOSFET N-CH DEPL MODE-STD TO-268AA/ TUBE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTT10N100D
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)1000 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET FeatureDepletion Mode
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]130 nC
Input Capacitance (Ciss) (Max) @ Vds2500 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max) [Max]400 W
Rds On (Max) @ Id, Vgs1.4 Ohm
Supplier Device PackageTO-268AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 300$ 15.79
NewarkEach 250$ 15.75
500$ 14.63

Description

General part information

IXTT10N100D2 Series

As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously "on" (emergency or burglar alarms, for instance).

Documents

Technical documentation and resources

No documents available