Discrete Semiconductor Products

SIHB12N50C-E3

LTB

MOSFET N-CH 500V 12A D2PAK

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Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 12A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHB12N50C-E3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds	1375 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	208 W
Rds On (Max) @ Id, Vgs	555 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Power Dissipation (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SIHB12N60ET5-GE3	600 V	N-Channel	4 V	380 mOhm	TO-263 (D2PAK)	30 V	-55 °C	150 °C	58 nC	937 pF	Surface Mount	147 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	MOSFET (Metal Oxide)	12 A
Vishay General Semiconductor - Diodes Division SIHB12N60E-GE3	600 V	N-Channel	4 V	380 mOhm	TO-263 (D2PAK)	30 V	-55 °C	150 °C	58 nC	937 pF	Surface Mount	147 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	MOSFET (Metal Oxide)	12 A
Vishay General Semiconductor - Diodes Division SIHB12N60ET1-GE3	600 V	N-Channel	4 V	380 mOhm	TO-263 (D2PAK)	30 V	-55 °C	150 °C	58 nC	937 pF	Surface Mount	147 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	MOSFET (Metal Oxide)	12 A
Vishay General Semiconductor - Diodes Division SIHB12N50C-E3	500 V	N-Channel	5 V	555 mOhm	TO-263 (D2PAK)	30 V	-55 °C	150 °C	48 nC	1375 pF	Surface Mount	208 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	MOSFET (Metal Oxide)	12 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 12A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources