SIHB12 Series

Catalog

MOSFET N-CH 600V 12A TO263

Part	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Power Dissipation (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SIHB12N60ET5-GE3	600 V	N-Channel	4 V	380 mOhm	TO-263 (D2PAK)	30 V	-55 °C	150 °C	58 nC	937 pF	Surface Mount	147 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	MOSFET (Metal Oxide)	12 A
Vishay General Semiconductor - Diodes Division SIHB12N60E-GE3	600 V	N-Channel	4 V	380 mOhm	TO-263 (D2PAK)	30 V	-55 °C	150 °C	58 nC	937 pF	Surface Mount	147 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	MOSFET (Metal Oxide)	12 A
Vishay General Semiconductor - Diodes Division SIHB12N60ET1-GE3	600 V	N-Channel	4 V	380 mOhm	TO-263 (D2PAK)	30 V	-55 °C	150 °C	58 nC	937 pF	Surface Mount	147 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	MOSFET (Metal Oxide)	12 A
Vishay General Semiconductor - Diodes Division SIHB12N50C-E3	500 V	N-Channel	5 V	555 mOhm	TO-263 (D2PAK)	30 V	-55 °C	150 °C	48 nC	1375 pF	Surface Mount	208 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	MOSFET (Metal Oxide)	12 A