Discrete Semiconductor Products

PMDT670UPE,115

NRND

MOSFET 2P-CH 20V 0.55A SOT666

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Discrete Semiconductor Products

NRND

MOSFET 2P-CH 20V 0.55A SOT666

Technical Specifications

Parameters and characteristics for this part

Specification	PMDT670UPE,115

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	550 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	1.14 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	87 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	330 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	850 mOhm
Supplier Device Package	SOT-666
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.3 V

Part	Configuration	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Qualification	FET Feature	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C
Freescale Semiconductor - NXP PMDT670UPE,115	2 P-Channel	Automotive	-55 °C	150 °C	1.14 nC	20 V	Surface Mount	1.3 V	87 pF	SOT-666	AEC-Q101	Logic Level Gate	330 mW	850 mOhm	MOSFET (Metal Oxide)	SOT-563 SOT-666	550 mA

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General part information

Mosfet Array 20V 550mA 330mW Surface Mount SOT-666

Technical documentation and resources