PMDT670UPE Series
Manufacturer: Nexperia USA Inc.
Beta
⌘K
20 V, 550 MA DUAL P-CHANNEL TRENCH MOSFET
| Part | FET Feature | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Power - Max [Max] | Qualification | Rds On (Max) @ Id, Vgs [Max] | Technology | Mounting Type | Drain to Source Voltage (Vdss) | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Configuration | Grade | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Logic Level Gate | 550 mA | 1.14 nC | 330 mW | AEC-Q101 | 850 mOhm | MOSFET (Metal Oxide) | Surface Mount | 20 V | SOT-563 SOT-666 | 150 °C | -55 °C | 2 P-Channel (Dual) | Automotive | 87 pF | SOT-666 | 1.3 V |