Discrete Semiconductor Products
STGP30H60DF
ActiveSTMicroelectronics
600 V, 30 A HIGH SPEED TRENCH GATE FIELD-STOP IGBT
Discrete Semiconductor Products
STGP30H60DF
ActiveSTMicroelectronics
600 V, 30 A HIGH SPEED TRENCH GATE FIELD-STOP IGBT
Technical Specifications
Parameters and characteristics for this part
| Specification | STGP30H60DF |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 105 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 260 W |
| Reverse Recovery Time (trr) | 110 ns |
| Supplier Device Package | TO-220 |
| Switching Energy | 350 µJ, 400 µJ |
| Td (on/off) @ 25°C [custom] | 50 ns |
| Td (on/off) @ 25°C [custom] | 160 ns |
| Test Condition | 30 A, 10 Ohm, 15 V, 400 V |
| Vce(on) (Max) @ Vge, Ic | 2.4 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 3.23 | |
Description
General part information
STGP30H60DF Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of high frequency converters. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer paralleling operation.