Discrete Semiconductor Products

PBSS5260PAPSX

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TRANS 2PNP 60V 2A 6HUSON

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Discrete Semiconductor Products

Active

TRANS 2PNP 60V 2A 6HUSON

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS5260PAPSX

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	110 hFE
Frequency - Transition	100 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-UDFN Exposed Pad
Power - Max [Max]	370 mW
Qualification	AEC-Q101
Supplier Device Package	DFN2020D-6
Transistor Type	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Part	Qualification	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Supplier Device Package	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Grade	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Power - Max [Max]	Mounting Type
Freescale Semiconductor - NXP PBSS5260PAP,115	AEC-Q100	2 A	100 nA	2 PNP (Dual)	6-HUSON (2x2)	6-UFDFN Exposed Pad	60 V	500 mV	150 °C	Automotive	110 hFE	100 MHz	510 mW	Surface Mount
Freescale Semiconductor - NXP PBSS5260PAPSX	AEC-Q101	2 A	100 nA	2 PNP (Dual)	DFN2020D-6	6-UDFN Exposed Pad	60 V	500 mV	150 °C	Automotive	110 hFE	100 MHz	370 mW	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 2A 100MHz 370mW Surface Mount DFN2020D-6

Technical documentation and resources