
Discrete Semiconductor Products
PBSS5260PAP,115
ActiveNexperia USA Inc.
TRANS GP BJT PNP 60V 2A 2000MW AUTOMOTIVE AEC-Q101 6-PIN HUSON EP T/R
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Search across all available documentation for this part.

Discrete Semiconductor Products
PBSS5260PAP,115
ActiveNexperia USA Inc.
TRANS GP BJT PNP 60V 2A 2000MW AUTOMOTIVE AEC-Q101 6-PIN HUSON EP T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS5260PAP,115 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 110 |
| Frequency - Transition | 100 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 6-UFDFN Exposed Pad |
| Power - Max [Max] | 510 mW |
| Qualification | AEC-Q100 |
| Supplier Device Package | 6-HUSON (2x2) |
| Transistor Type | 2 PNP (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PBSS5260 Series
PNP/PNP low VCEsatdouble transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
Documents
Technical documentation and resources