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SOT1118
Discrete Semiconductor Products

PBSS5260PAP,115

Active
Nexperia USA Inc.

TRANS GP BJT PNP 60V 2A 2000MW AUTOMOTIVE AEC-Q101 6-PIN HUSON EP T/R

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SOT1118
Discrete Semiconductor Products

PBSS5260PAP,115

Active
Nexperia USA Inc.

TRANS GP BJT PNP 60V 2A 2000MW AUTOMOTIVE AEC-Q101 6-PIN HUSON EP T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS5260PAP,115
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]110
Frequency - Transition100 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case6-UFDFN Exposed Pad
Power - Max [Max]510 mW
QualificationAEC-Q100
Supplier Device Package6-HUSON (2x2)
Transistor Type2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 569$ 0.18
1000$ 0.17
3000$ 0.16
DigikeyCut Tape (CT) 1$ 0.57
10$ 0.49
100$ 0.34
500$ 0.26
1000$ 0.22
Digi-Reel® 1$ 0.57
10$ 0.49
100$ 0.34
500$ 0.26
1000$ 0.22
N/A 8946$ 1.09
Tape & Reel (TR) 3000$ 0.17

Description

General part information

PBSS5260 Series

PNP/PNP low VCEsatdouble transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.