Specification	ECH8655R-TL-H

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	24 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	16.8 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs [Max]	17 mOhm
Supplier Device Package	8-ECH
Technology	MOSFET (Metal Oxide)

ECH8655R Series

Dual N-Channel Power MOSFET 24V, 9A, 17mΩ

Part	Current - Continuous Drain (Id) @ 25°C	FET Feature	Technology	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Supplier Device Package	Configuration	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Drain to Source Voltage (Vdss)
ON Semiconductor ECH8655R-TL-H	9 A	Logic Level Gate	MOSFET (Metal Oxide)	150 °C	16.8 nC	1.5 W	8-ECH	2 N-Channel (Dual)	17 mOhm	Surface Mount	24 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

ECH8655R is an N-Channel Power MOSFET, 24V, 9A, 17mΩ, Dual ECH8 for general purpose switching applications.