ECH8655R Series

Dual N-Channel Power MOSFET 24V, 9A, 17mΩ

Catalog

Dual N-Channel Power MOSFET 24V, 9A, 17mΩ

Part	Current - Continuous Drain (Id) @ 25°C	FET Feature	Technology	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Supplier Device Package	Configuration	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Drain to Source Voltage (Vdss)
ON Semiconductor ECH8655R-TL-H	9 A	Logic Level Gate	MOSFET (Metal Oxide)	150 °C	16.8 nC	1.5 W	8-ECH	2 N-Channel (Dual)	17 mOhm	Surface Mount	24 V

Dual N-Channel Power MOSFET 24V, 9A, 17mΩ

• Low on resistance

• 2.5 V drive

• Common-drain type

• Built-in gate protection resistor

• Best suited for LiB charging and discharging switch

• Protection diode in

ECH8655R is an N-Channel Power MOSFET, 24V, 9A, 17mΩ, Dual ECH8 for general purpose switching applications.