Discrete Semiconductor Products

MSE1PGHM3/89A

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DIODE GEN PURP 400V 1A MICROSMP

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Discrete Semiconductor Products

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DIODE GEN PURP 400V 1A MICROSMP

Technical Specifications

Parameters and characteristics for this part

Specification	MSE1PGHM3/89A

Capacitance @ Vr, F	5 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	1 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	DO-219AD
Qualification	AEC-Q101
Reverse Recovery Time (trr)	780 ns
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-219AD (MicroSMP)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Qualification	Capacitance @ Vr, F	Grade	Supplier Device Package	Current - Average Rectified (Io)	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Speed	Technology	Voltage - Forward (Vf) (Max) @ If
Vishay General Semiconductor - Diodes Division MSE1PJHM3J/89A	1 µA	780 ns	175 ░C	-55 C	DO-219AD	AEC-Q101	5 pF	Automotive	DO-219AD (MicroSMP)	1 A	Surface Mount	600 V	Standard Recovery >500ns	200 mA	Standard	1.1 V
Vishay General Semiconductor - Diodes Division MSE1PGHM3/89A	1 µA	780 ns	175 ░C	-55 C	DO-219AD	AEC-Q101	5 pF	Automotive	DO-219AD (MicroSMP)	1 A	Surface Mount	400 V	Standard Recovery >500ns	200 mA	Standard	1.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 400 V 1A Surface Mount DO-219AD (MicroSMP)

Technical documentation and resources