MSE1 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
DIODE GEN PURP 600V 1A MICROSMP
| Part | Current - Reverse Leakage @ Vr | Reverse Recovery Time (trr) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Qualification | Capacitance @ Vr, F | Grade | Supplier Device Package | Current - Average Rectified (Io) | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Speed | Technology | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 1 µA | 780 ns | 175 ░C | -55 C | DO-219AD | AEC-Q101 | 5 pF | Automotive | DO-219AD (MicroSMP) | 1 A | Surface Mount | 600 V | Standard Recovery >500ns | 200 mA | Standard | 1.1 V |
Vishay General Semiconductor - Diodes Division | 1 µA | 780 ns | 175 ░C | -55 C | DO-219AD | AEC-Q101 | 5 pF | Automotive | DO-219AD (MicroSMP) | 1 A | Surface Mount | 400 V | Standard Recovery >500ns | 200 mA | Standard | 1.1 V |