Discrete Semiconductor Products

NTTFD021N08C

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MOSFET, POWER, 80V POWERTRENCH® POWER CLIP HALF BRIDGE CONFIGURATION

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Discrete Semiconductor Products

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MOSFET, POWER, 80V POWERTRENCH® POWER CLIP HALF BRIDGE CONFIGURATION

Technical Specifications

Parameters and characteristics for this part

Specification	NTTFD021N08C

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	24 A, 6 A
Drain to Source Voltage (Vdss)	80 V
Gate Charge (Qg) (Max) @ Vgs	8.4 nC
Input Capacitance (Ciss) (Max) @ Vds	572 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	12-PowerWQFN
Power - Max [Max]	1.7 W, 26 W
Rds On (Max) @ Id, Vgs [Max]	21 mOhm
Supplier Device Package	12-WQFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

MOSFET, Power, 80V POWERTRENCH® Power Clip Half Bridge Configuration

Part	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Configuration	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]
ON Semiconductor NTTFD021N08C	MOSFET (Metal Oxide)	-55 °C	150 °C	80 V	12-WQFN (3.3x3.3)	12-PowerWQFN	Surface Mount	4 V	21 mOhm	6 A 24 A	2 N-Channel (Dual)	8.4 nC	572 pF	1.7 W 26 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET, Power, 80V POWERTRENCH® Power Clip Symmetric Dual N-Channel, 21mΩ @ 10V, 24A, WQFN12 3.3x3.3mm