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STP60NF06L
Discrete Semiconductor Products

STP60NF06L

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STMicroelectronics

N-CHANNEL 60 V, 0.012 OHM TYP., 60 A STRIPFET(TM) II POWER MOSFET IN TO-220 PACKAGE

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STP60NF06L
Discrete Semiconductor Products

STP60NF06L

Active
STMicroelectronics

N-CHANNEL 60 V, 0.012 OHM TYP., 60 A STRIPFET(TM) II POWER MOSFET IN TO-220 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP60NF06L
Current - Continuous Drain (Id) @ 25°C60 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]66 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2000 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-65 C
Package / CaseTO-220-3
Power Dissipation (Max)110 W
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)15 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1092$ 2.46

Description

General part information

STP60NF06L Series

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.