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NLAS5213AMUT
Discrete Semiconductor Products

FDPC1012S

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POWERTRENCH POWER CLIP 25V ASYMETRIC DUAL N-CHANNEL MOSFET

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NLAS5213AMUT
Discrete Semiconductor Products

FDPC1012S

Active
ON Semiconductor

POWERTRENCH POWER CLIP 25V ASYMETRIC DUAL N-CHANNEL MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDPC1012S
Configuration2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C13 A, 35 A, 26 A, 88 A
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs8 nC
Gate Charge (Qg) (Max) @ Vgs25 nC
Input Capacitance (Ciss) (Max) @ Vds1075 pF, 3456 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power - Max900 mW, 800 mW
Rds On (Max) @ Id, Vgs2.2 mOhm, 7 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.2 V, 2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 701$ 0.43
701$ 0.43

Description

General part information

FDPC1012S Series

This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.

Documents

Technical documentation and resources