Discrete Semiconductor Products
STD13NM60ND
ActiveSTMicroelectronics
N-CHANNEL 600 V, 325 MOHM TYP., 11 A FDMESH II POWER MOSFET IN A DPAK PACKAGE
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Discrete Semiconductor Products
STD13NM60ND
ActiveSTMicroelectronics
N-CHANNEL 600 V, 325 MOHM TYP., 11 A FDMESH II POWER MOSFET IN A DPAK PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STD13NM60ND |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 24.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 845 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 109 W |
| Rds On (Max) @ Id, Vgs | 380 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 9414 | $ 3.21 | |
Description
General part information
STD13NM60ND Series
This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources