Specification	MJD50RLG

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	200 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Frequency - Transition	10 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.56 W
Supplier Device Package	DPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	400 V

NJVMJD50 Series

1.0 A, 400 V High Voltage NPN Bipolar Power Transistor

Part	Transistor Type	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Mounting Type
ON Semiconductor NJVMJD50T4G	NPN	10 MHz	1 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	400 V	1 A	30	150 °C	-65 °C	200 µA	1.56 W	Surface Mount
ON Semiconductor MJD50RLG	NPN	10 MHz	1 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	400 V	1 A	30	150 °C	-65 °C	200 µA	1.56 W	Surface Mount
ON Semiconductor MJD50G	NPN	10 MHz	1 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	400 V	1 A	30	150 °C	-65 °C	200 µA	1.56 W	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NJVMJD50 Series

The NPN Bipolar Power Transistor is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications.