NJVMJD50 Series

1.0 A, 400 V High Voltage NPN Bipolar Power Transistor

Catalog

1.0 A, 400 V High Voltage NPN Bipolar Power Transistor

Part	Transistor Type	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Mounting Type
ON Semiconductor NJVMJD50T4G	NPN	10 MHz	1 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	400 V	1 A	30	150 °C	-65 °C	200 µA	1.56 W	Surface Mount
ON Semiconductor MJD50RLG	NPN	10 MHz	1 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	400 V	1 A	30	150 °C	-65 °C	200 µA	1.56 W	Surface Mount
ON Semiconductor MJD50G	NPN	10 MHz	1 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	400 V	1 A	30	150 °C	-65 °C	200 µA	1.56 W	Surface Mount

Catalog

1.0 A, 400 V High Voltage NPN Bipolar Power Transistor

Key Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves ("-1" Suffix)

• Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)

• Electrically Similar to Popular TIP47, and TIP50

• 250 and 400 V (Min) VCEO(sus)

• 1 A Rated Collector Current

• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• These Devices are Pb-Free and are RoHS Compliant

Description

The NPN Bipolar Power Transistor is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications.