Discrete Semiconductor Products

SIS780DN-T1-GE3

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MOSFET N-CH 30V 18A PPAK1212-8

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Discrete Semiconductor Products

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MOSFET N-CH 30V 18A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIS780DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24.5 nC
Input Capacitance (Ciss) (Max) @ Vds	722 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max) [Max]	27.7 W
Rds On (Max) @ Id, Vgs	13.5 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SIS780DN-T1-GE3	2.3 V	18 A	30 V	PowerPAK® 1212-8	N-Channel	MOSFET (Metal Oxide)	PowerPAK® 1212-8	13.5 mOhm	20 V	27.7 W	-55 °C	150 °C	Schottky Diode (Body)	4.5 V 10 V	Surface Mount	722 pF	24.5 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 18A (Tc) 27.7W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources