SIS780 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 18A PPAK1212-8
| Part | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Package / Case | FET Type | Technology | Supplier Device Package | Rds On (Max) @ Id, Vgs | Vgs (Max) | Power Dissipation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | FET Feature | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 2.3 V | 18 A | 30 V | PowerPAK® 1212-8 | N-Channel | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | 13.5 mOhm | 20 V | 27.7 W | -55 °C | 150 °C | Schottky Diode (Body) | 4.5 V 10 V | Surface Mount | 722 pF | 24.5 nC |