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8 Power TDFN
Discrete Semiconductor Products

NVMFD6H846NLWFT1G

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ON Semiconductor

MOSFET - POWER, DUAL N-CHANNEL, 80 V, 15 MΩ 31 A NVMFD6H846NL

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8 Power TDFN
Discrete Semiconductor Products

NVMFD6H846NLWFT1G

Active
ON Semiconductor

MOSFET - POWER, DUAL N-CHANNEL, 80 V, 15 MΩ 31 A NVMFD6H846NL

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMFD6H846NLWFT1G
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C31 A, 9.4 A
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs17 nC
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power - Max34 W, 3.2 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]15 mOhm
Supplier Device Package8-DFN (5x6) Dual Flag (SO8FL-Dual)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.08
10$ 1.33
100$ 0.90
500$ 0.72
Digi-Reel® 1$ 2.08
10$ 1.33
100$ 0.90
500$ 0.72
Tape & Reel (TR) 1500$ 0.63
3000$ 0.58
4500$ 0.57
NewarkEach 1000$ 0.76
2500$ 0.61
10000$ 0.59
ON SemiconductorN/A 1$ 0.53

Description

General part information

NVMFD6H846NL Series

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Documents

Technical documentation and resources