NVMFD6H846NL Series

MOSFET - Power, Dual N-Channel, 80 V, 15 mΩ 31 A NVMFD6H846NL

Catalog

MOSFET - Power, Dual N-Channel, 80 V, 15 mΩ 31 A NVMFD6H846NL

Part	Technology	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Package / Case	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power - Max	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor NVMFD6H840NLT1G	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-55 °C	175 ░C	AEC-Q101	80 V	Surface Mount	8-DFN (5x6) Dual Flag (SO8FL-Dual)	8-PowerTDFN	Automotive	32 nC	2 V	14 A 74 A	2002 pF	6.9 mOhm
ON Semiconductor NVMFD6H840NLWFT1G	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-55 °C	175 ░C	AEC-Q101	80 V	Surface Mount	8-DFN (5x6) Dual Flag (SO8FL-Dual)	8-PowerTDFN	Automotive	32 nC	2 V	14 A 74 A	2002 pF	6.9 mOhm
ON Semiconductor NVMFD6H846NLWFT1G	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-55 °C	175 ░C	AEC-Q101	80 V	Surface Mount	8-DFN (5x6) Dual Flag (SO8FL-Dual)	8-PowerTDFN	Automotive		2 V	9.4 A 31 A			3.2 W 34 W	15 mOhm	17 nC
ON Semiconductor NVMFD6H846NLT1G	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-55 °C	175 ░C	AEC-Q101	80 V	Surface Mount	8-DFN (5x6) Dual Flag (SO8FL-Dual)	8-PowerTDFN	Automotive		2 V	9.4 A 31 A			3.2 W 34 W	15 mOhm	17 nC

Catalog

MOSFET - Power, Dual N-Channel, 80 V, 15 mΩ 31 A NVMFD6H846NL

Key Features

• Small Footprint (5x6mm)

• Low RDS (on)

• Low QGand Capacitance

• NVMFD6H846NLWF

• AEC-Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Description

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.