Discrete Semiconductor Products

SIHD9N60E-GE3

Active

MOSFET N-CH 600V 9A DPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 600V 9A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHD9N60E-GE3

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC
Input Capacitance (Ciss) (Max) @ Vds	778 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	78 W
Rds On (Max) @ Id, Vgs	368 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SIHD9N60E-GE3	TO-252AA	Surface Mount	600 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	368 mOhm	78 W	52 nC	MOSFET (Metal Oxide)	10 V	4.5 V	N-Channel	30 V	-55 °C	150 °C	778 pF	9 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 9A (Tc) 78W (Tc) Surface Mount TO-252AA

Technical documentation and resources