SIHD9 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 600V 9A DPAK
| Part | Supplier Device Package | Mounting Type | Drain to Source Voltage (Vdss) | Package / Case | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | FET Type | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | TO-252AA | Surface Mount | 600 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 368 mOhm | 78 W | 52 nC | MOSFET (Metal Oxide) | 10 V | 4.5 V | N-Channel | 30 V | -55 °C | 150 °C | 778 pF | 9 A |