Specification	NSS12600CF8T1G

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Supplier Device Package	ChipFET™
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	170 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	12 V

NSS12600CF8 Series

12 V, 6.0 A, Low VCE(sat) PNP Transistor ChipFET

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Supplier Device Package	Current - Collector (Ic) (Max)	Mounting Type	Frequency - Transition	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor NSS12600CF8T1G	250	170 mV	PNP	ChipFET™	5 A	Surface Mount	100 MHz	-55 °C	150 °C	100 nA	12 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NSS12600CF8 Series

Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.