NSS12600CF8 Series

12 V, 6.0 A, Low VCE(sat) PNP Transistor ChipFET

Catalog

12 V, 6.0 A, Low VCE(sat) PNP Transistor ChipFET

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Supplier Device Package	Current - Collector (Ic) (Max)	Mounting Type	Frequency - Transition	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor NSS12600CF8T1G	250	170 mV	PNP	ChipFET™	5 A	Surface Mount	100 MHz	-55 °C	150 °C	100 nA	12 V

Catalog

12 V, 6.0 A, Low VCE(sat) PNP Transistor ChipFET

Key Features

• High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)

Description

Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.