Specification	MJF45H11

Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 hFE
Frequency - Transition	40 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220FP
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

MJF45H11 Series

PNP Bipolar Power Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Mounting Type	Power - Max [Max]	Frequency - Transition	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Package / Case
ON Semiconductor MJF45H11	40 hFE	-55 °C	150 °C	1 µA	80 V	PNP	Through Hole	2 W	40 MHz	TO-220FP	1 V	TO-220-3 Full Pack

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MJF45H11 Series

The Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJF44H11 (NPN) and MJF45H11 (PNP) are complementary devices.