MJF45H11 Series

PNP Bipolar Power Transistor

Catalog

PNP Bipolar Power Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Mounting Type	Power - Max [Max]	Frequency - Transition	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Package / Case
ON Semiconductor MJF45H11	40 hFE	-55 °C	150 °C	1 µA	80 V	PNP	Through Hole	2 W	40 MHz	TO-220FP	1 V	TO-220-3 Full Pack

Catalog

PNP Bipolar Power Transistor

Key Features

• Low Collector-Emitter Saturation Voltage--VCE(sat)= 1.0 V (Max) @ 8.0 A

• Fast Switching Speeds

• Complementary Pairs Simplifies Designs

• Pb-Free Packages are Available

Description

The Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJF44H11 (NPN) and MJF45H11 (PNP) are complementary devices.