Discrete Semiconductor Products

APT30GP60BG

Active

IGBT PT MOS 7 SINGLE 600 V 30 A TO-247 3 TO-247 TUBE ROHS COMPLIANT: YES

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

IGBT PT MOS 7 SINGLE 600 V 30 A TO-247 3 TO-247 TUBE ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	APT30GP60BG

Current - Collector (Ic) (Max) [Max]	100 A
Current - Collector Pulsed (Icm)	100 A
Gate Charge	90 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	463 W
Supplier Device Package	TO-247 [B]
Switching Energy	260 µJ, 250 µJ
Td (on/off) @ 25°C	55 ns
Td (on/off) @ 25°C	13 ns
Test Condition	5 Ohm, 15 V, 30 A, 400 V
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Package / Case	Mounting Type	Gate Charge	IGBT Type	Vce(on) (Max) @ Vge, Ic	Test Condition	Supplier Device Package	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Switching Energy
Microchip Technology APT30GP60BG	-55 °C	150 °C	55 ns	13 ns	600 V	463 W	TO-247-3	Through Hole	90 nC	PT	2.7 V	5 Ohm 15 V 30 A 400 V	TO-247 [B]	100 A	100 A	250 µJ 260 µJ

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT PT 600 V 100 A 463 W Through Hole TO-247 [B]

Technical documentation and resources